Bipolar (BJT) Transistor PNP 80 V 10 A - 150 W Through Hole TO-3Specifications: Mfr:- NTE Electronics, IncSeries:- -Package:- BagPart Status:- ActiveTransistor Type:- PNPCurrent - Collector (Ic) (Max):- 10 AVoltage - Collector Emitter Breakdown (Max):- 80 VVce Saturation (Max) @ Ib, Ic:- 1V @ 500mA, 5ACurrent - Collector Cutoff (Max):- 5mADC Current Gain (hFE) (Min) @ Ic, Vce:- 50 @ 1A, 2VPower - Max:- 150 WFrequency - Transition:- -Operating Temperature:- -65°C ~ 200°C (TJ)Mounting Type:- Through HolePackage / Case:- TO-204AA, TO-3Supplier Device Package:- TO-3RoHS Status: ROHS3 CompliantECCN:- EAR99HTSUS:- 8541.29.0095Additional Resources: Other Names: 2368-2N3792Standard Package:- 1