Bipolar (BJT) Transistor NPN 80 V 15 A 4MHz 160 W Through Hole TO-3Specifications: Mfr:- NTE Electronics, IncSeries:- -Package:- BagPart Status:- ActiveTransistor Type:- NPNCurrent - Collector (Ic) (Max):- 15 AVoltage - Collector Emitter Breakdown (Max):- 80 VVce Saturation (Max) @ Ib, Ic:- 4V @ 3.75A, 15ACurrent - Collector Cutoff (Max):- 1mADC Current Gain (hFE) (Min) @ Ic, Vce:- 35 @ 2A, 4VPower - Max:- 160 WFrequency - Transition:- 4MHzOperating Temperature:- -65°C ~ 200°C (TJ)Mounting Type:- Through HolePackage / Case:- TO-204AA, TO-3Supplier Device Package:- TO-3RoHS Status: ROHS3 CompliantECCN:- EAR99HTSUS:- 8541.29.0095Additional Resources: Other Names: 2368-2N5882Standard Package:- 1