Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92SSpecification:Mfr :- NTE Electronics, IncSeries :- -Package :- BagPart Status :- ActiveTransistor Type :- NPN - Pre-BiasedCurrent - Collector (Ic) (Max) :- 100 mAVoltage - Collector Emitter Breakdown (Max) :- 50 VResistor - Base (R1) :- 47 kOhmsResistor - Emitter Base (R2) :- 47 kOhmsDC Current Gain (hFE) (Min) @ Ic, Vce :- 50 @ 5mA, 5VVce Saturation (Max) @ Ib, Ic :- 300mV @ 250A, 5mACurrent - Collector Cutoff (Max) :- 500nAFrequency - Transition :- 250 MHzPower - Max :- 300 mWMounting Type :- Through HolePackage / Case :- TO-226-3, TO-92-3 Short BodySupplier Device Package :- TO-92SEnvironmental & Export Classifications: RoHS Status : ROHS3 Compliant ECCN :- EAR99 HTSUS :- 8541.29.0095